APT2X20DC60J APT2X30DC60J APT2X40DC60J APT2X50DC60J APT2X60DC60J APT2X20DC120J APT2X40DC120J APT2X50DC120J APT2X60DC120J APT40DC60HJ APTDC40H601G APT20DC120HJ APTDC20H1201G APT40DC120HJ APT30SM120JCU2 APT100MC120JCU2 APTSM120HM50CT3AG APTMC120HM17CT3AG APTMC120AM55CT1AG APTSM120AM55CT1AG APTMC120AM25CT3AG APTMC120AM20CT1AG APTSM120AM25CT3AG APTMC120AM12CT3AG APTMC120AM08CD3AG APTMC120AM09CT3AG APTSM120AM08CT6AG APTMC170AM60CT1AG APTMC170AM30CT1AG APTMC60TL11CT3AG APTMC60TLM55CT3AG APTMC60TLM14CAG APTMC120HR11CT3AG APTMC120HRM40CT3AG APTSM120TA10CT3AG APTSM120TAM34CT3AG APTSM120TAM33CTPAG APTMC120TAM17CTPAG APTMC120TAM12CTPAG
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APT35SM70S (pdf) |
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Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche UIS Rating Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and System Costs Overview Silicon Carbide SiC is the ideal technology for higher switching frequency, higher efficiency, and higher power >650 V applications. Target markets and applications include: • Commercial air conditioning, power distribution • drives, welding, UPS, SMPS, induction heating • battery charger, onboard chargers, H/EV powertrain, DC-DC converter, energy recovery • Smart inverter, wind turbine • power supply, X-Ray power supply • Defense and oil drives, auxiliary power supplies SiC MOSFET and SiC Schottky Barrier Diode product lines from Microsemi increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling. Full In-House and Foundry Capabilities Design • Silvaco design and process simulator Discrete Products • TCAD-TMA • Mask-making and layout • Solid works and FEA Process • High-temperature ion implantation • High-temperature annealing • SiC MOSFET gate oxide • ASML steppers • RIE and plasma etching • Sputtered and evaporated metal deposition AnalyticaRl aendleSuapspoertd Products • SEM/EDAX • Thermal imaging 600 Volt • Photo Emission Microscope system Phemos 1000 • 150°C Rated Schottky Barrier Reliability Testing and Screening • AEC-Q10D1iodes 10A, 20A, 30A • Wafe•r-leve1l7H5T°RCB/RHaTGteBd Schottky Barrier • SonoscaDn iaondd eX-sr:ay10A, 20A, 30A 1200 Volt Future Products 2013 • • 2014 1700V-175° C Rated Schottky BarrierRDeiodleesa 1s0eA,d20PAroductsjamDeesle.kteedrr 4/22/13 1 1200V-175°C Rated Schottky Barrier Diode 50A 600 Volt james.kerr 4/22/13 1 Deleted: • 150°C Rated Schottky BjFaaomrremrsia.ekttererdr :4/F2o2n/1t:3121 The Power of Silicon Carbide Semiconductors |
More datasheets: RL110S-121L | RL110S-120M | RL110S-150M | RL110S-151L | RL110S-180M | RL110S-181L | RL110S-220M | RL110S-100M | MIC5016BN | MIC5016BWM |
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