ARF461CG

ARF461CG Datasheet

ARF461C G

Part	Datasheet
ARF461CG	ARF461CG (pdf)

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RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE ARF461C G TO-247 ARF461D G Common Drain 250V 150W 65MHz The ARF461C and ARF461D comprise a symmetric pair of common drain RF power transistors designed for pushpull commercial, medical and industrial RF power applications up to 65 MHz. They have been optimized for both linear and high classes of operation. • 250 Volt, MHz Characteristics: Output Power = 150 Watts. Gain = 13dB Class AB = 75% Class C • Low Cost Common Source RF Package. • Low Vth thermal • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. All Ratings TC = 25°C unless otherwise ARF461CG/DG Unit 1000 V 1000 ±30 °C/W -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS ON IDSS IGSS gfs VGS TH Parameter Drain-Source Breakdown Voltage VGS = 0V, ID = 250 uA On State Drain Voltage 1 ID ON = 3.25A, VGS = 10V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = 0.8VDSS, VGS = 0, TC = 125°C Gate-Source Leakage Current VDS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 3.25A Gate Threshold Voltage VDS = VGS, ID = 50mA Max Unit 1000 25 uA ±100 mhos Volts CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics CISS Coss Crss td on

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RF POWER MOSFETs

N - CHANNEL ENHANCEMENT MODE

ARF461C G

TO-247

ARF461D G

Common Drain
250V 150W 65MHz

The ARF461C and ARF461D comprise a symmetric pair of common drain RF power transistors designed for pushpull commercial, medical and industrial RF power applications up to 65 MHz. They have been optimized for both linear and high classes of operation.
• 250 Volt, MHz Characteristics:

Output Power = 150 Watts.

Gain = 13dB Class AB
= 75% Class C
• Low Cost Common Source RF Package.
• Low Vth thermal
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
• RoHS Compliant

MAXIMUM RATINGS

Symbol VDSS VDGO ID VGS PD

TJ, TSTG TL

Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec.

All Ratings TC = 25°C unless otherwise

ARF461CG/DG

Unit
1000 V
1000
±30
°C/W
-55 to 150 °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol BVDSS VDS ON

IDSS

IGSS gfs VGS TH

Parameter Drain-Source Breakdown Voltage VGS = 0V, ID = 250 uA On State Drain Voltage 1 ID ON = 3.25A, VGS = 10V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = 0.8VDSS, VGS = 0, TC = 125°C Gate-Source Leakage Current VDS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 3.25A Gate Threshold Voltage VDS = VGS, ID = 50mA

Max Unit
1000
25 uA
±100
mhos

Volts

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website -

Dynamic Characteristics

CISS Coss Crss td on

More datasheets: K2401F1 | K1300S | K2400F2 | K3000F23 | K2500S | K2500F23 | K2500F2 | K2400S | K2400F23 | MM74C32N

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Datasheet ID: ARF461CG 648921