ARF448BG

ARF448BG Datasheet

ARF448A

Part	Datasheet
ARF448BG	ARF448BG (pdf)

Related Parts	Information
ARF448AG	ARF448AG

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ARF448A TO-247 ARF448B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, MHz Characteristics: Low Cost Common Source RF Package. Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness. Gain = 15dB Class C Low Thermal Resistance. Efficiency = 75% Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol Parameter VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. All Ratings TC = 25°C unless otherwise specified. ARF448A/448B UNIT Volts Amps ±30 Volts Watts ° C/W -55 to 150 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 mA VDS ON State Drain Voltage 1 ID ON = 7.5A, VGS = 10V IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 7.5A VGS TH Gate Threshold Voltage VDS = VGS, ID = 50mA

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ARF448A

TO-247

ARF448B

Common Source

RF POWER MOSFETs

N - CHANNEL ENHANCEMENT MODE
150V 140W 65MHz

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Specified 150 Volt, MHz Characteristics:

Low Cost Common Source RF Package.

Output Power = 140 Watts.

Very High Breakdown for Improved Ruggedness.

Gain = 15dB Class C

Low Thermal Resistance.

Efficiency = 75%

Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol Parameter

VDSS VDGO

ID VGS PD RqJC TJ,TSTG TL

Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec.

All Ratings TC = 25°C unless otherwise specified.

ARF448A/448B

UNIT

Volts

Amps
±30

Volts

Watts
° C/W
-55 to 150

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 mA

VDS ON State Drain Voltage 1 ID ON = 7.5A, VGS = 10V

IDSS

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

Forward Transconductance VDS = 25V, ID = 7.5A

VGS TH Gate Threshold Voltage VDS = VGS, ID = 50mA

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Datasheet ID: ARF448BG 648919