MT18JSF25672AZ 2GB MT18JSF51272AZ 4GB
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MT18JSF51272AZ-1G4D1 (pdf) |
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MT18JSF51272AZ-1G6M1 |
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MT18JSF25672AZ-1G4G1 |
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MT18JSF25672AZ-1G6G1 |
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MT18JSF51272AZ-1G1D1 |
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2GB, 4GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ 2GB MT18JSF51272AZ 4GB • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module UDIMM • Fast data transfer rates PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 2GB 256 Meg x 72 , 4GB 512 Meg x 72 • VDD = 1.5V ±0.075V • VDDSPD = • Supports ECC error detection and correction • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Dual rank • On-board I2C temperature sensor with integrated serial presence-detect SPD EEPROM • 8 internal device banks • Fixed burst chop BC of 4 and burst length BL of 8 via the mode register set MRS • Selectable BC4 or BL8 on-the-fly OTF • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Figure 1 240-Pin UDIMM MO-269 R/C E Module height 30mm 1.18in Options • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 240-pin DIMM halogen-free • Frequency/CAS latency 1.25ns CL = 11 DDR3-1600 1.5ns CL = 9 DDR3-1333 1.87ns CL = 7 DDR3-1066 1.87ns CL = 8 DDR3-1066 2.5ns CL = 5 DDR3-800 2.5ns CL = 6 DDR3-800 2 Marking None I -1G6 -1G4 -1G1 -1G0 -80C -80B Notes Contact Micron for industrial temperature module offerings. Not recommended for new designs. Table 1 Key Timing Parameters Speed Grade -1G6 -1G4 -1G1 -1G0 -80B Industry Nomenclature PC3-12800 PC3-10600 PC3-8500 PC3-8500 PC3-6400 CL = 11 CL = 10 1600 1333 1333 Data Rate MT/s CL = 9 CL = 8 CL = 7 1333 1066 1333 1066 1066 1066 CL = 6 800 CL = 5 667 tRCD ns 15 tRP ns 15 tRC ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. |
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