APTM50DAM35TG

APTM50DAM35TG Datasheet

APTM50DAM35TG

Part	Datasheet
APTM50DAM35TG	APTM50DAM35TG (pdf)

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APTM50DAM35TG Boost Chopper MOSFET Power Module VDSS = 500V RDSon = typ Tj = 25°C ID = 99A Tc = 25°C VBUS SENSE V BUS NT C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction S2 0/VBU S OUT NT C1 VB US VB US SE NSE G2 S2 0/VBUS S2 G2 NTC2 NTC1 Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM50DAM35TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current

PDF Datasheet Preview

APTM50DAM35TG

Boost Chopper MOSFET Power Module

VDSS = 500V RDSon = typ Tj = 25°C ID = 99A Tc = 25°C

VBUS SENSE

V BUS

NT C2

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

S2 0/VBU S

OUT NT C1

VB US

VB US SE NSE

G2 S2
0/VBUS

S2 G2

NTC2 NTC1

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM50DAM35TG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

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Datasheet ID: APTM50DAM35TG 648899