APTM120DA29TG
APTM120DA29TG Datasheet
APTM120DA29TG
| Part | Datasheet |
|---|---|
APTM120DA29TG |
APTM120DA29TG (pdf) |
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| APTM120DA29TG Boost chopper MOSFET Power Module VDSS = 1200V RDSon = typ Tj = 25°C ID = 34A Tc = 25°C VBUS SENSE VB US NTC2 S2 0/VBU S OUT NTC1 VB US VB US SE NSE G2 S2 0/VBUS S2 G2 NTC2 NTC1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1200 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM120DA29TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS |
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