APTM100DU18TG
APTM100DU18TG Datasheet
APTM100DU18TG
| Part | Datasheet |
|---|---|
APTM100DU18TG |
APTM100DU18TG (pdf) |
| PDF Datasheet Preview |
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| APTM100DU18TG Dual Common Source MOSFET Power Module VDSS = 1000V RDSon = typ Tj = 25°C ID = 43A Tc = 25°C D1 Q1 D2 Q2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C1 • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance NT C2 - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G2 D2 NTC2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1000 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM100DU18TG |
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