MRF5S21150HR3

MRF5S21150HR3 Datasheet

MRF5S21150H Rev. 1, 5/2006

Part	Datasheet
MRF5S21150HR3	MRF5S21150HR3 (pdf)

Related Parts	Information
MRF5S21150HSR3	MRF5S21150HSR3

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s To b e u s e d i n C l a s A B f o r P C N - P C S / c e l u l a r a d i o a n d W L applications. • Typical 2 - Carrier W - CDMA Performance VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain dB Efficiency 25% IM3 10 MHz Offset - 37 dBc in MHz Channel Bandwidth ACPR 5 MHz Offset - 39 dBc in MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, 28 Vdc, 2140 MHz, 125 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21150HR3 ARCHIVE INFORMATION ARCHIVE INFORMATION CASE 465C - 02, STYLE 1 NI - 880S MRF5S21150HSR3 Table Maximum Ratings Rating Value Drain- Source Voltage Gate- Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C VDSS VGS PD - +65 - +15 Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation TC = 25°C Derate above 25°C Tstg - 65 to +150 Table Thermal Characteristics Characteristic Value 1,2 Thermal Resistance, Junction to Case Temperature 80°C, 100 W CW Case Temperature 75°C, 33 W CW MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955. Unit Vdc W/°C °C °C °C W/°C Unit °C/W Freescale Semiconductor, Inc., 2006, All rights reserved. RF Device Data Freescale Semiconductor MRF5S21150HR3 MRF5S21150HSR3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION

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Freescale Semiconductor Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s To b e u s e d i n C l a s A B f o r P C N - P C S / c e l u l a r a d i o a n d W L applications.
• Typical 2 - Carrier W - CDMA Performance VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain dB Efficiency 25% IM3 10 MHz Offset - 37 dBc in MHz Channel Bandwidth ACPR 5 MHz Offset - 39 dBc in MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, 28 Vdc, 2140 MHz, 125 Watts CW Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF5S21150HR3 MRF5S21150HSR3
2110 - 2170 MHz, 33 W AVG., 28 V 2 x W - CDMA

LATERAL N - CHANNEL RF POWER MOSFETs

CASE 465B - 03, STYLE 1 NI - 880

MRF5S21150HR3

ARCHIVE INFORMATION ARCHIVE INFORMATION

CASE 465C - 02, STYLE 1 NI - 880S

MRF5S21150HSR3

Table Maximum Ratings

Rating

Value

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation TC = 25°C Derate above 25°C

VDSS VGS PD
- +65
- +15

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation TC = 25°C Derate above 25°C

Tstg
- 65 to +150

Table Thermal Characteristics Characteristic

Value 1,2

Thermal Resistance, Junction to Case Temperature 80°C, 100 W CW Case Temperature 75°C, 33 W CW

MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955.

Unit Vdc W/°C °C °C °C W/°C

Unit °C/W

Freescale Semiconductor, Inc., 2006, All rights reserved.

RF Device Data Freescale Semiconductor

MRF5S21150HR3 MRF5S21150HSR3 1

ARCHIVE INFORMATION ARCHIVE INFORMATION

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MRF5S21150HR3 Datasheet file may be downloaded here without warranties.

Datasheet ID: MRF5S21150HR3 635610