APTM100A23SCTG

APTM100A23SCTG Datasheet

APTM100A23SCTG

Part	Datasheet
APTM100A23SCTG	APTM100A23SCTG (pdf)

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APTM100A23SCTG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = typ Tj = 25°C ID = 36A Tc = 25°C VBUS NT C2 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 G1 S1 Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated Q2 G2 S2 0 /V BU S NT C1 • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration VBUS S1 G1 0/VBUS S2 G2 NTC2 NTC1 Absolute maximum ratings Parameter Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings Unit VDSS IDM VGS RDSon PD Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation 1000 Tc = 25°C Tc = 80°C ±30 Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM100A23SCTG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic

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APTM100A23SCTG

Phase leg

Series & SiC parallel diodes

MOSFET Power Module

VDSS = 1000V RDSon = typ Tj = 25°C ID = 36A Tc = 25°C

VBUS

NT C2

Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Q1 G1 S1

Features
• Power MOS MOSFETs
- Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

Q2 G2 S2
0 /V BU S NT C1
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

VBUS

S1 G1
0/VBUS

S2 G2

NTC2 NTC1

Absolute maximum ratings

Parameter

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Max ratings Unit

VDSS

IDM VGS RDSon PD

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation
1000

Tc = 25°C

Tc = 80°C
±30

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM100A23SCTG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

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Datasheet ID: APTM100A23SCTG 648854