BCR101...
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BCR 101T E6327 (pdf) |
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BCR 101L3 E6327 |
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NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = , R2 = BCR101... BCR101F/L3 BCR101T R1 R2 2 E EHA07184 Type BCR101F* BCR101L3* BCR101T* *Preliminary Marking UCs 1=B UCs 1=B Pin Configuration 2=E 3=C - 2=E 3=C - 2=E 3=C - Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR101F, TS 128°C BCR101L3, TS 135°C BCR101T, TS 109°C Junction temperature Storage temperature Symbol VCEO VCBO VEBO Vi on IC Ptot Tj Tstg Package TSFP-3 TSLP-3-4 SC75 Value Unit -65 150 Nov-27-2003 BCR101... Thermal Resistance Parameter Junction - soldering point1 BCR101F BCR101L3 BCR101T Symbol RthJS Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V BR CEO 50 IC = 100 µA, IB = 0 Collector-base breakdown voltage |
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