APTGF400U120D4G

APTGF400U120D4G Datasheet

APTGF400U120D4G

Part	Datasheet
APTGF400U120D4G	APTGF400U120D4G (pdf)

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APTGF400U120D4G Single switch NPT IGBT Power Module VCES = 1200V IC = 400A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 3 • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • M6 connectors for power • M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C 2500 Tj = 150°C 800A 1100V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF400U120D4G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

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APTGF400U120D4G

Single switch NPT IGBT Power Module

VCES = 1200V IC = 400A Tc = 80°C

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control 3
• Non Punch Through NPT FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C
2500

Tj = 150°C 800A 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF400U120D4G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic ICES Zero Gate Voltage Collector Current

VCE sat Collector Emitter saturation Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

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Datasheet ID: APTGF400U120D4G 648784