APTGF30H60T3G

APTGF30H60T3G Datasheet

APTGF30H60T3G

Part	Datasheet
APTGF30H60T3G	APTGF30H60T3G (pdf)

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APTGF30H60T3G Full - Bridge NPT IGBT Power Module VCES = 600V IC = 30A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 28 27 26 25 29 30 23 22 20 19 18 16 15 32 234 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF30H60T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE on VGE th IGES Collector Emitter on Voltage Gate Threshold Voltage Gate Emitter Leakage Current VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C

PDF Datasheet Preview

APTGF30H60T3G

Full - Bridge NPT IGBT Power Module

VCES = 600V IC = 30A Tc = 80°C

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
28 27 26 25 29 30
23 22
20 19 18 16 15
32 234
13 10 11 12

All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase leg of twice the current capability
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF30H60T3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VCE on

VGE th IGES

Collector Emitter on Voltage

Gate Threshold Voltage Gate Emitter Leakage Current

VGE = 0V VCE = 600V

Tj = 25°C Tj = 125°C

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Datasheet ID: APTGF30H60T3G 648773