APTGF200DA120D3G
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APTGF200DA120D3G (pdf) |
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APTGF200DA120D3G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 200A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C 1400 Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF200DA120D3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE on Collector Emitter on Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = 0V, VCE = 1200V VGE = 15V IC = 200A Tj = 25°C Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics QG Gate charge Td on Tr |
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