APTGF200DA120D3G

APTGF200DA120D3G Datasheet


APTGF200DA120D3G

Part Datasheet
APTGF200DA120D3G APTGF200DA120D3G APTGF200DA120D3G (pdf)
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APTGF200DA120D3G

Boost chopper NPT IGBT Power Module

VCES = 1200V IC = 200A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors

Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C
1400

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF200DA120D3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VCE on Collector Emitter on Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

VGE = 0V, VCE = 1200V

VGE = 15V IC = 200A

Tj = 25°C Tj = 125°C

VGE = VCE , IC = 8 mA

VGE = 20V, VCE = 0V
400 nA

Dynamic Characteristics

QG Gate charge

Td on Tr
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Datasheet ID: APTGF200DA120D3G 648754