HUFA75852G3

HUFA75852G3 Datasheet

HUFA75852G3

Part	Datasheet
HUFA75852G3	HUFA75852G3 (pdf)

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Data Sheet HUFA75852G3 November 2000 File Number 4969 75A, 150V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE HUFA75852G3 TO-247 BRAND 75852G Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUFA75852G3 UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous T C T C 21500oCoC, V, VGGSS==101V0V F Figiugruere2 2 . Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTE TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75852G3 Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS

PDF Datasheet Preview

Data Sheet

HUFA75852G3

November 2000

File Number 4969
75A, 150V, Ohm, N-Channel, Power MOSFET

Packaging

JEDEC TO-247

SOURCE DRAIN GATE

DRAIN TAB
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

HUFA75852G3

TO-247

BRAND 75852G

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

HUFA75852G3

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous

T C T C
21500oCoC, V, VGGSS==101V0V F Figiugruere2 2 .

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL

Package Body for 10s, See Techbrief TB334 Tpkg

NOTE TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75852G3

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS

I GSS

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Datasheet ID: HUFA75852G3 633995