APTGF180DH60G
APTGF180DH60G Datasheet
APTGF180DH60G
| Part | Datasheet |
|---|---|
APTGF180DH60G |
APTGF180DH60G (pdf) |
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| APTGF180DH60G Asymmetrical - bridge NPT IGBT Power Module VCES = 600V IC = 180A Tc = 80°C Q1 G1 VBUS CR3 OUT1 OUT2 Q4 G4 0/VBUS Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Non Punch Through NPT Fast - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings Unit Tc = 25°C Tc = 80°C Tc = 25°C ±20 Tc = 25°C Tj = 150°C 400A 600V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF180DH60G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage VGE = 0V VCE = 600V VGE =15V IC = 180A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 300 1000 VGE th Gate Threshold Voltage VGE = VCE, IC = 2mA IGES Gate Emitter Leakage Current VGE = 20 V, VCE = 0V |
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