IDD04S60C
IDD04S60C Datasheet
IDD04S60C
| Part | Datasheet |
|---|---|
IDD04S60C |
IDD04S60C (pdf) |
| Related Parts | Information |
|---|---|
IDD04S60CBUMA1 |
IDD04S60CBUMA1 |
| PDF Datasheet Preview |
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| IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary VDC Qc IF 600 V 8 nC 4A PG-TO252 thinQ! 2G Diode specially designed for fast switching applications like • SMPS e.g. CCM PFC typ Pout= 400 - 800W • Motor Drives Solar applications UPS Type IDD04S60C Package PG-TO252 Marking D04S60C Pin 1 n.c. Maximum ratings Parameter Symbol Conditions Continuous forward current RMS forward current IF I F,RMS T C<130 °C T C <100°C f =50 Hz Surge non-repetitive forward current, sine halfwave I F,SM T C=25 °C, t p=10 ms Repetitive peak forward current I F,RM Non-repetitive peak forward current I F,max T j=150 °C, T C=100 °C, D T C=25 °C, t p=10 µs i value T C=25 °C, t p=10 ms V RRM Diode dv/dt ruggedness dv/ dt V R = Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Pin 2 A Pin 3 C Value 4 6 200 600 50 42 -55 175 Unit A A2s V/ns W °C 2013-02-12 IDD04S60C |
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