APTGF100A120TG
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APTGF100A120TG (pdf) |
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APTGF100A120TG Phase leg NPT IGBT Power Module VCES = 1200V IC = 100A Tc = 80°C VBUS NT C2 Q1 G1 Q2 G2 0/VBU S NT C1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C Tj = 150°C 200A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF100A120TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter Saturation Voltage VGE = 0V VCE = 1200V VGE = 15V IC = 100A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 350 600 VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = VCE, IC = 2 mA |
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