APTC60DAM35T1G

APTC60DAM35T1G Datasheet

APTC60DAM35T1G

Part	Datasheet
APTC60DAM35T1G	APTC60DAM35T1G (pdf)

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APTC60DAM35T1G Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = max Tj = 25°C ID = 72A Tc = 25°C 3 NTC Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±20 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1800 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTC60DAM35T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C 40 µA VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V 3 V ±150 nA Dynamic Characteristics Qg Total gate Charge

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APTC60DAM35T1G

Boost chopper Super Junction MOSFET

Power Module

VDSS = 600V RDSon = max Tj = 25°C ID = 72A Tc = 25°C
3 NTC

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
•
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Pins 1/2 3/4 5/6 must be shorted together

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±20

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
1800

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTC60DAM35T1G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

Test Conditions

Min Typ Max Unit

VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C
40 µA

VGS = 10V, ID = 72A

VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V
3 V ±150 nA

Dynamic Characteristics

Qg Total gate Charge

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Datasheet ID: APTC60DAM35T1G 648710