QSE214C

QSE214C Datasheet

QSE213C/QSE214C Plastic Silicon Infrared Phototransistor

Part	Datasheet
QSE214C	QSE214C (pdf)

Related Parts	Information
QSE213C	QSE213C

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QSE213C/QSE214C Plastic Silicon Infrared Phototransistor March 2006 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor • NPN Silicon Phototransistor • Package Type Sidelooker • Medium Reception Angle, 50° • Daylight Filter • Clean Epoxy Package • Matching Emitter QEE213 The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. Package Dimensions EMITTER SQ. 2X Notes Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise Schematic Collector Emitter 2006 Fairchild Semiconductor Corporation QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings TA = 25°C unless otherwise Parameter Rating TOPR TSTG TSOL-I TSOL-F VCE VEC Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V mW Electrical/Optical Characteristics TA =25°C unless otherwise Symbol Parameter Test Conditions Min Typ Max Units λPS Peak Sensitivity Q Reception Angle ID BVCEO BVECO IC ON Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current VCE SAT Saturation Voltage tr Rise Time tf Fall Time VCE = 10 V, Ee = 0 IC = 1mA IE = 100µA Ee = mW/cm2, VCE = 5V QSE213C QSE214C VCE = 5 V 5 , Ee = 0.5mW/cm2, IC = 0.1mA 5 VCC = 5V, RL = IC = 1mA 880 nM ±25

PDF Datasheet Preview

QSE213C/QSE214C Plastic Silicon Infrared Phototransistor

March 2006

QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
• NPN Silicon Phototransistor
• Package Type Sidelooker
• Medium Reception Angle, 50°
• Daylight Filter
• Clean Epoxy Package
• Matching Emitter QEE213

The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package.

Package Dimensions

EMITTER

SQ. 2X

Notes Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal
dimensions unless otherwise

Schematic

Collector

Emitter
2006 Fairchild Semiconductor Corporation

QSE213C/QSE214C Plastic Silicon Infrared Phototransistor

Absolute Maximum Ratings TA = 25°C unless otherwise

Parameter

Rating

TOPR TSTG TSOL-I TSOL-F VCE VEC

Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1
-40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec
30 5 100

Unit °C °C °C °C V mW

Electrical/Optical Characteristics TA =25°C unless otherwise

Symbol Parameter

Test Conditions

Min Typ Max Units
λPS Peak Sensitivity Q Reception Angle

ID BVCEO BVECO IC ON

Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current

VCE SAT Saturation Voltage
tr Rise Time tf Fall Time

VCE = 10 V, Ee = 0

IC = 1mA

IE = 100µA

Ee = mW/cm2, VCE = 5V

QSE213C QSE214C

VCE = 5 V 5 , Ee = 0.5mW/cm2, IC = 0.1mA 5

VCC = 5V, RL = IC = 1mA
880 nM
±25

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived QSE214C Datasheet file may be downloaded here without warranties.

Datasheet ID: QSE214C 634535