APT75GN120J

APT75GN120J Datasheet

AP1T27050GVN120J APT75GN120J

Part	Datasheet
APT75GN120J	APT75GN120J (pdf)

PDF Datasheet Preview
TYPICAL PERFORMANCE CURVES AP1T27050GVN120J APT75GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE ON temperature A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge gate drive design and minimizes losses. • 1200V Field Stop • Trench Gate Low VCE on • Easy Paralleling • Intergrated Gate Resistor Low EMI, High Reliability Applications Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS SOT-227 E "UL Recognized" file # E145592 MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise APT75GN120J UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 TC = 150°C Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 1200 ±30 124 57 225 225A 1200V 379 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions V BR CES VGE TH VCE ON I CES I GES RG int Collector-Emitter Breakdown Voltage VGE = 0V, I C = 3mA Gate Threshold Voltage VCE = VGE, I C = 3mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 75A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 75A, Tj = 125°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V Intergrated Gate Resistor MIN TYP MAX 1200 100 TBD 600 CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Units Volts µA nA DYNAMIC CHARACTERISTICS Symbol Characteristic Cies Coes Cres VGEP Qg Qge Qgc SSOA td on tr td off tf Eon1 Eon2 Eoff td on tr td off tf Eon1 Eon2 Eoff Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time

PDF Datasheet Preview

TYPICAL PERFORMANCE CURVES

AP1T27050GVN120J APT75GN120J

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE ON temperature A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate Low VCE on
• Easy Paralleling
• Intergrated Gate Resistor Low EMI, High Reliability

Applications Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

SOT-227 E
"UL Recognized" file # E145592

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise

APT75GN120J

UNIT

VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 TC = 150°C Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering from Case for 10 Sec.
1200 ±30 124 57 225 225A 1200V 379 -55 to 150 300

Volts Amps

Watts °C

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

V BR CES VGE TH VCE ON

I CES I GES RG int

Collector-Emitter Breakdown Voltage VGE = 0V, I C = 3mA Gate Threshold Voltage VCE = VGE, I C = 3mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 75A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 75A, Tj = 125°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V Intergrated Gate Resistor

MIN TYP MAX 1200
100 TBD 600

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -

Units

Volts
µA nA

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Cies Coes Cres VGEP Qg Qge Qgc

SSOA
td on tr
td off tf

Eon1 Eon2 Eoff td on
tr td off
tf Eon1 Eon2 Eoff

Switching Safe Operating Area

Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT75GN120J Datasheet file may be downloaded here without warranties.

Datasheet ID: APT75GN120J 648703