HUFA76645P3

HUFA76645P3 Datasheet

HUFA76645P3, HUFA76645S3S

Part	Datasheet
HUFA76645P3	HUFA76645P3 (pdf)

Related Parts	Information
HUFA76645S3S	HUFA76645S3S
HUFA76645S3ST	HUFA76645S3ST

PDF Datasheet Preview
Data Sheet HUFA76645P3, HUFA76645S3S January 2002 75A, 100V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE DRAIN FLANGE HUFA76645P3 GATE SOURCE HUFA76645S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76645P3 TO-220AB 76645P HUFA76645S3S TO-263AB 76645S NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76645S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76645P3, HUFA76645S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous = = = = 1122005500ooCCooCC,, 75 63 62 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES: TJ = 25oC to 150oC. 310 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2002 Fairchild Semiconductor Corporation HUFA76645P3, HUFA76645S3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance

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Data Sheet

HUFA76645P3, HUFA76645S3S

January 2002
75A, 100V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

DRAIN FLANGE

HUFA76645P3

GATE SOURCE

HUFA76645S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76645P3

TO-220AB
76645P

HUFA76645S3S

TO-263AB
76645S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76645S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA76645P3, HUFA76645S3S

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous
= = = =
1122005500ooCCooCC,,
75 63 62

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES:

TJ = 25oC to 150oC.
310 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2002 Fairchild Semiconductor Corporation

HUFA76645P3, HUFA76645S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

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Datasheet ID: HUFA76645P3 634020