APT5510JFLL

APT5510JFLL Datasheet

APT5510JFLL

Part	Datasheet
APT5510JFLL	APT5510JFLL (pdf)

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APT5510JFLL 550V 44A POWER MOS 7 R FREDFET SOT-227 S Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. "UL Recognized" • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT5510JFLL 550 44 176 ±30 ±40 463 -55 to 150 300 44 35 2500 UNIT Volts Amps Volts Watts W/°C °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ID on State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V RDS on Drain-Source On-State Resistance 2 VGS = 10V, 22A IDSS Zero Gate Voltage Drain Current VDS = 550V, VGS = 0V Zero Gate Voltage Drain Current VDS = 440V, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS th Gate Threshold Voltage VDS = VGS, ID = 2.5mA 250 1000 ±100 CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - UNIT Volts Amps Ohms nA Volts DYNAMIC CHARACTERISTICS APT5510JFLL

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APT5510JFLL
550V 44A

POWER MOS 7 R FREDFET

SOT-227 S

Power MOS is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS by significantly lowering combines lower conduction and switching

RDS ON losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
"UL Recognized"
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol VDSS ID IDM VGS VGSM

TJ,TSTG TL IAR EAR EAS

Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

APT5510JFLL 550 44 176 ±30 ±40 463
-55 to 150 300 44 35 2500

UNIT Volts Amps

Volts Watts W/°C
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA

ID on State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V

RDS on Drain-Source On-State Resistance 2 VGS = 10V, 22A

IDSS

Zero Gate Voltage Drain Current VDS = 550V, VGS = 0V Zero Gate Voltage Drain Current VDS = 440V, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

VGS th Gate Threshold Voltage VDS = VGS, ID = 2.5mA
250 1000 ±100

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -

UNIT Volts Amps Ohms
nA Volts

DYNAMIC CHARACTERISTICS

APT5510JFLL

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Datasheet ID: APT5510JFLL 648681