APT50M75JLLU3

APT50M75JLLU3 Datasheet

APT50M75JLLU3

Part	Datasheet
APT50M75JLLU3	APT50M75JLLU3 (pdf)

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APT50M75JLLU3 Buck chopper MOSFET Power Module VDSS = 500V RDSon = max Tj = 25°C ID = 51A Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 50 2500 IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C IFRMS RMS Forward Current Square wave, 50% duty These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50M75JLLU3 All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions Min Typ Max Unit VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 25.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V 100 µA 500 75 5V ±100 nA Dynamic Characteristics

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APT50M75JLLU3

Buck chopper

MOSFET Power Module

VDSS = 500V RDSon = max Tj = 25°C ID = 51A Tc = 25°C

Application
• AC and DC motor control
• Switched Mode Power Supplies

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
50 2500

IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C

IFRMS RMS Forward Current Square wave, 50% duty

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT50M75JLLU3

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

Test Conditions

Min Typ Max Unit

VGS = 0V,VDS = 500V Tj = 25°C

VGS = 0V,VDS = 400V Tj = 125°C

VGS = 10V, ID = 25.5A

VGS = VDS, ID = 1mA

VGS = ±20 V, VDS = 0V
100 µA 500 75 5V ±100 nA

Dynamic Characteristics

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Datasheet ID: APT50M75JLLU3 648679