APT40M75JN
APT40M75JN Datasheet
APT40M75JN 400V 56.0A APT40M90JN 400V 51.0A
| Part | Datasheet |
|---|---|
APT40M75JN |
APT40M75JN (pdf) |
| PDF Datasheet Preview |
|---|
| SOT-227 S APT40M75JN 400V 56.0A APT40M90JN 400V 51.0A POWER MOS "UL Recognized" File No. E145592 S SINGLE DIE PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT 40M75JN APT 40M90JN UNIT VDSS Drain-Source Voltage Volts ID IDM, lLM Continuous Drain Current TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage ±30 Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 µA APT40M75JN APT40M90JN ID ON On State Drain Current 2 VDS > ID ON x RDS ON Max, VGS = 10V APT40M75JN APT40M90JN Drain-Source On-State Resistance 2 RDS ON VGS = 10V, ID [Cont.] APT40M75JN APT40M90JN IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS TH Gate Threshold Voltage VDS = VGS, ID = 2.5mA THERMAL CHARACTERISTICS |
| More datasheets: DCMMN17C5SN | LTP-2157AKY | MIKROE-2161 | MAX17019NEVKIT+ | FS3L50R07W2H3FB11BOMA1 | LTST-S270GKT | GBO25-16NO1 | GBO25-12NO1 | 76650-0079 | 74HC132 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT40M75JN Datasheet file may be downloaded here without warranties.