FS3L50R07W2H3FB11BOMA1
FS3L50R07W2H3FB11BOMA1 Datasheet
FS3L50R07W2H3F_B11
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FS3L50R07W2H3FB11BOMA1 |
FS3L50R07W2H3FB11BOMA1 (pdf) |
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| IGBT-Modul IGBT-Module FS3L50R07W2H3F_B11 • 3-Level-Applikationen • Motorantriebe • • USV-Systeme • • • • Al2O3 Substrat mit kleinem thermischen Widerstand • • • Robuste Montage durch integrierte Befestigungsklammern VCES = 650V IC nom = 50A / ICRM = 100A • 3-Level-Applications • • • • • • • • • Rugged mounting due to integrated mounting clamps Digit IGBT-Modul IGBT-Module FS3L50R07W2H3F_B11 Kollektor-Emitter-Sperrspannung Tvj = 25°C Kollektor-Dauergleichstrom TC = 95°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C tP = 1 ms Gesamt-Verlustleistung TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung VCES IC nom IC ICRM Ptot VGES 650 50 75 100 +/-20 Kollektor-Emitter-Sättigungsspannung IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität |
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