APT40GR120B2D30

APT40GR120B2D30 Datasheet

APTA4P0TG40RG1R2102B0B22DD3300

Part	Datasheet
APT40GR120B2D30	APT40GR120B2D30 (pdf)

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APTA4P0TG40RG1R2102B0B22DD3300 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - The Ultra Fast NPT - is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast offers superior ruggedness and ultrafast switching speed. • Low Saturation Voltage • Low Tail Current • RoHS Compliant • Short Circuit Withstand Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current TO-247 Combi IGBT and Diode Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS . MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise Ratings Unit Vces VGE I C1 I C2 I CM SCWT PD TJ,TSTG Collector Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1 Short Circuit Withstand Time VCE = 600V, VGE = 15V, TC=125°C Total Power Dissipation TC = 25°C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 1200 V ±30 -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ V BR CES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, I C = 1.0mA Gate Threshold Voltage VCE = VGE, I C = 2.0mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 40A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 40A, Tj = 125°C Collector-Emitter On Voltage VGE = 15V, IC = 88A, Tj = 25°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V 1200 CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1100 ±250 Unit Volts uA nA Microsemi Website - DYNAMIC CHARACTERISTICS Cies Coes Cres VGEP Qg 3 Qge Gate- Collector Charge td on tr td off tf E5 on2 E6 off td on tr td off tf E5 on2 E6 off

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APTA4P0TG40RG1R2102B0B22DD3300
1200V, 40A, VCE on = 2.5V Typical

Ultra Fast NPT -

The Ultra Fast NPT - is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast offers superior ruggedness and ultrafast switching speed.
• Low Saturation Voltage
• Low Tail Current
• RoHS Compliant
• Short Circuit Withstand Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current

TO-247

Combi IGBT and Diode

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS .

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise

Ratings

Unit

Vces VGE I C1 I C2 I CM SCWT

PD TJ,TSTG

Collector Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1 Short Circuit Withstand Time VCE = 600V, VGE = 15V, TC=125°C Total Power Dissipation TC = 25°C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec.
1200 V
±30
-55 to 150 °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter

Min Typ

V BR CES VGE TH VCE ON

I CES I GES

Collector-Emitter Breakdown Voltage VGE = 0V, I C = 1.0mA Gate Threshold Voltage VCE = VGE, I C = 2.0mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 40A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 40A, Tj = 125°C Collector-Emitter On Voltage VGE = 15V, IC = 88A, Tj = 25°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V
1200

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1100 ±250

Unit Volts
uA nA

Microsemi Website -

DYNAMIC CHARACTERISTICS

Cies Coes Cres VGEP Qg 3 Qge

Gate- Collector Charge
td on tr td off tf

E5 on2

E6 off
td on tr
td off tf

E5 on2

E6 off

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Datasheet ID: APT40GR120B2D30 648665