APT35SM70B

APT35SM70B Datasheet

APT35SM70B

Part	Datasheet
APT35SM70B	APT35SM70B (pdf)

PDF Datasheet Preview
APT35SM70B Silicon Carbide N-Channel Power MOSFET Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Package APT35SM70B TO-247 FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: • Low on-resistance virtually independent on the ambient temperature • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance ESR • Stable operation at high junction temperature, Tj max = +175C • Fast and reliable body diode • Superior avalanche ruggedness system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need of external Free Wheeling Diode • Lower system cost of ownership Applications • PV inverter, converter and industrial motor drives • Smart grid transmission & distribution • Induction heating, and welding • H/EV powertrain and EV charger • Power supply and distribution Symbol VDSS ID IDM VGS MAXIMUM RATINGS Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor Ratings 700 35 25 80 -10 to +25 176 Unit V V W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Tj Tstg TL Torque Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Mounting Torque TO-247 Package , 6-32 or M3 screw Unit °C/W in•lbf N•m APT35SM70B STATIC CHARACTERISTICS Symbol Parameter Test Conditions V BR DSS

PDF Datasheet Preview

APT35SM70B

Silicon Carbide N-Channel Power MOSFET

Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

Package APT35SM70B

TO-247

FEATURES / TYPICAL APPLICATIONS

SiC MOSFET Features:
• Low on-resistance virtually independent on the ambient temperature
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance ESR
• Stable operation at high junction temperature, Tj max = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external Free Wheeling Diode
• Lower system cost of ownership

Applications
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Symbol VDSS ID IDM VGS

MAXIMUM RATINGS

Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor

Ratings 700 35 25 80
-10 to +25 176

Unit V

V W/°C

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Tj Tstg TL

Torque

Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case

Mounting Torque TO-247 Package , 6-32 or M3 screw

Unit
°C/W
in•lbf

N•m

APT35SM70B

STATIC CHARACTERISTICS

Symbol Parameter

Test Conditions

V BR DSS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT35SM70B Datasheet file may be downloaded here without warranties.

Datasheet ID: APT35SM70B 648659