APT15GP90BG

APT15GP90BG Datasheet

AP9T0105VGP90B G APT15GP90B APT15GP90BG*

Part	Datasheet
APT15GP90BG	APT15GP90BG (pdf)

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TYPICAL PERFORMANCE CURVES AP9T0105VGP90B G APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS IGBT The POWER MOS IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated TO-247 MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise APT15GP90B G UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 900 ±30 43 21 60 60A 900V 250 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions V BR CES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, I C = 350µA Gate Threshold Voltage VCE = VGE, I C = 1mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V MIN TYP MAX Units Volts 250 µA 2500 ±100 nA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS Cies Coes Cres VGEP Qg Qge Qgc SSOA Switching Safe Operating Area td on tr td off tf Eon1 Eon2 Eoff td on tr td off tf Eon1 Eon2 Eoff

PDF Datasheet Preview

TYPICAL PERFORMANCE CURVES

AP9T0105VGP90B G APT15GP90B APT15GP90BG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.

POWER MOS IGBT

The POWER MOS IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA Rated

TO-247

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise

APT15GP90B G

UNIT

VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL

Collector-Emitter Voltage Gate-Emitter Voltage

Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1

Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering from Case for 10 Sec.
900 ±30 43 21 60 60A 900V 250 -55 to 150 300

Volts Amps

Watts °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

V BR CES VGE TH VCE ON

I CES I GES

Collector-Emitter Breakdown Voltage VGE = 0V, I C = 350µA Gate Threshold Voltage VCE = VGE, I C = 1mA, Tj = 25°C

Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V

MIN TYP MAX Units

Volts
250 µA
2500
±100 nA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -

DYNAMIC CHARACTERISTICS

Cies Coes Cres VGEP Qg Qge Qgc

SSOA Switching Safe Operating Area
td on
tr td off
tf Eon1 Eon2 Eoff td on
tr td off
tf Eon1 Eon2 Eoff

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Datasheet ID: APT15GP90BG 648630