APT15F50K

APT15F50K Datasheet

APT15F50K_KF

Part	Datasheet
APT15F50K	APT15F50K (pdf)

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APT15F50K_KF 500V, 15A, Max, trr N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. APT15F50KF APT15F50K Single die FREDFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol Parameter Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage 2 Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Parameter TJ,TSTG Power Dissipation TC = 25°C [K] Power Dissipation TC = 25°C [KF] Junction to Case Thermal Resistance [K] Junction to Case Thermal Resistance [KF] Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Package Weight Torque Mounting Torque TO-220 Package , 4-40 or M3 screw 15F50K 15F50KF ±30 Unit V mJ A Min -55 Max 223 37 150 300 Unit W °C/W °C oz g in•lbf N•m Microsemi Website - Static Characteristics TJ = 25°C unless otherwise Symbol Parameter Test Conditions VBR DSS RDS on VGS th Drain-Source Breakdown Voltage Breakdown Voltage Temperature Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature

PDF Datasheet Preview

APT15F50K_KF
500V, 15A, Max, trr

N-Channel FREDFET

Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

APT15F50KF

APT15F50K

Single die FREDFET
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback

Absolute Maximum Ratings Symbol Parameter

Continuous Collector Current TC = 25°C

Continuous Collector Current TC = 100°C

Pulsed Drain Current 1

Gate-Source Voltage 2

Single Pulse Avalanche Energy 2

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Parameter

TJ,TSTG

Power Dissipation TC = 25°C [K] Power Dissipation TC = 25°C [KF] Junction to Case Thermal Resistance [K] Junction to Case Thermal Resistance [KF] Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds 1.6mm from case

Package Weight

Torque Mounting Torque TO-220 Package , 4-40 or M3 screw
15F50K 15F50KF
±30

Unit

V mJ A

Min -55

Max 223 37
150 300

Unit W
°C/W
°C oz g in•lbf N•m

Microsemi Website -

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

Test Conditions

VBR DSS

RDS on VGS th

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature

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Datasheet ID: APT15F50K 648626