BCR 569 E6327
BCR 569 E6327 Datasheet
BCR569
| Part | Datasheet |
|---|---|
BCR 569 E6327 |
BCR 569 E6327 (pdf) |
| PDF Datasheet Preview |
|---|
| BCR569 PNP Silizium Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = C 3 R1 2 1 VPS05161 Type BCR569 Marking XLs EHA07180 Pin Configuration Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature VCEO VCBO VEBO Vi on IC Ptot Tj Tstg Thermal Resistance Junction - soldering point1 RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 50 5 30 500 330 150 -65 150 Unit V mA mW °C Jul-23-2001 BCR569 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1 IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1 IC = 50 mA, IB = mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = V Input resistor V BR CEO 50 V BR CBO 50 V BR EBO 5 ICBO 100 nA 630 - VCEsat Vi off Vi on R1 AC Characteristics |
| More datasheets: SS35HE-TP | MAX11198EVKIT# | HM1L52LDP242H6PLF | DCMY-8W8P-K87 | APTGF350DA60G | ASMDC050F-2 | MP3427GL-P | MP3427GL-Z | SFR9014TF | MIKROE-2735 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BCR569E6327 Datasheet file may be downloaded here without warranties.