APTGF350DA60G

APTGF350DA60G Datasheet

APTGF350DA60G

Part	Datasheet
APTGF350DA60G	APTGF350DA60G (pdf)

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APTGF350DA60G Boost chopper NPT IGBT Power Module VCES = 600V IC = 350A Tc = 80°C VBUS CR1 OUT Q2 G2 E2 0/VBUS Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C 1225 VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C 1562 Tj = 150°C 800A 600V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF350DA60G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C 200 1750 VCE sat Collector Emitter saturation Voltage VGE =15V IC = 360A Tj = 25°C Tj = 125°C VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = VCE, IC = 4mA

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APTGF350DA60G

Boost chopper NPT IGBT Power Module

VCES = 600V IC = 350A Tc = 80°C

VBUS CR1

OUT Q2 G2 E2
0/VBUS

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C
1225

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C
1562

Tj = 150°C 800A 600V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF350DA60G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VGE = 0V VCE = 600V

Tj = 25°C Tj = 125°C
200 1750

VCE sat Collector Emitter saturation Voltage

VGE =15V IC = 360A

Tj = 25°C Tj = 125°C

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

VGE = VCE, IC = 4mA

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Datasheet ID: APTGF350DA60G 648780