APT13GP120K
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APT13GP120KG (pdf) |
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APT13GP120K 1200V POWER MOS IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS IGBT provides a lower cost alternative to a Power MOSFET. TO-220 • Low Conduction Loss • 100 kHz operation 600V, 10A • Low Gate Charge • 50 kHz operation 600V, 16A • Ultrafast Tail Current shutoff • RBSOA Rated MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise specified. APT13GP120K UNIT VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient 1200 ±20 ±30 41 20 50 50A 960V 250 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVCES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA Gate Threshold Voltage VCE = VGE, IC = 1mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 13A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 13A, Tj = 125°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V 1200 Volts 250 µA 2500 ±100 nA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS Symbol Characteristic Cies Coes Cres VGEP Qg Qge Qgc RBSOA td on tr td off tf Eon1 Eon2 Eoff td on tr td off tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 |
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