PTF080101M V1

PTF080101M V1 Datasheet

PTF080101M

Part	Datasheet
PTF080101M V1	PTF080101M V1 (pdf)

PDF Datasheet Preview
PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz The PTF080101M is an unmatched 10-watt FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Gain dB Drain Efficiency % Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 180 mA, = 960 MHz 19 Gain 18 16 Ef f iciency 14 20 Output Power dBm 70 60 50 40 30 20 10 0 45 PTF080101M Package PG-RFP-10 • Typical EDGE performance - Average output power = W - Gain = 19 dB - Efficiency = 37% - EVM = • Typical CW performance - Output Power at = W - Gain = 18 dB - Efficiency = 50% • Integrated ESD protection Human Body Model Class 1 minimum • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR 28 V, 10 W CW output power • Pb-free and RoHS compliant RF Characteristics Two-Tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 8 PTF080101M DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance TCASE = 70°C, 10 W DC Ordering Information Type PTF080101M Package Outline PG-RFP-10 Symbol V BR DSS IDSS RDS on VGS IGSS Min 65 Unit V µA V µA Symbol VDSS VGS TJ PD TSTG Value 65 to +12 150 to +150 Unit V °C W W/°C °C °C/W Package Description Molded plastic, SMD Marking 0081 See Infineon distributor for future availability. Data Sheet 2 of 8 PTF080101M Drain Efficiency % Typical Performance data taken in production test fixture Gain dB , Return Loss dB Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm Ef f iciency Gain Return Loss 880 900 920 940 960 980 1000 Frequency MHz Drain Efficiency % RMS EVM Average Typical EDGE Performance VDD = 28 V, IDQ = 180 mA, = MHz Ef f iciency Output Power dBm Drain Efficiency % Modulation Spectrum dBc EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 180 mA, = MHz -40 200 kHz -60 400 kHz -70 600 kHz -80 26 28 30 32 34 36 38 40 Output Power dBm

PDF Datasheet Preview

PTF080101M

High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz

The PTF080101M is an unmatched 10-watt FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

Gain dB Drain Efficiency %

Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 180 mA, = 960 MHz
19 Gain 18
16 Ef f iciency
14 20

Output Power dBm
70 60 50 40 30 20 10 0 45

PTF080101M Package PG-RFP-10
• Typical EDGE performance - Average output power = W - Gain = 19 dB - Efficiency = 37% - EVM =
• Typical CW performance - Output Power at = W - Gain = 18 dB - Efficiency = 50%
• Integrated ESD protection Human Body Model Class 1 minimum
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR 28 V, 10 W CW output power
• Pb-free and RoHS compliant

RF Characteristics

Two-Tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 960 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ

Unit dB % dBc

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 8

PTF080101M

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V

Maximum Ratings

Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation

Above 25°C derate by Storage Temperature Range Thermal Resistance TCASE = 70°C, 10 W DC
Ordering Information

Type PTF080101M

Package Outline PG-RFP-10

Symbol V BR DSS

IDSS RDS on

VGS IGSS

Min 65

Unit V µA V µA

Symbol VDSS VGS TJ PD

TSTG

Value 65
to +12 150
to +150

Unit V °C W

W/°C °C
°C/W

Package Description Molded plastic, SMD

Marking 0081
*See Infineon distributor for future availability. Data Sheet
2 of 8

PTF080101M

Drain Efficiency %

Typical Performance data taken in production test fixture

Gain dB , Return Loss dB

Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm

Ef f iciency

Gain

Return Loss
880 900 920 940 960 980 1000

Frequency MHz

Drain Efficiency % RMS EVM Average

Typical EDGE Performance VDD = 28 V, IDQ = 180 mA, = MHz

Ef f iciency

Output Power dBm

Drain Efficiency %

Modulation Spectrum dBc

EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 180 mA, = MHz
-40 200 kHz
-60 400 kHz
-70 600 kHz
-80 26 28 30 32 34 36 38 40 Output Power dBm

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PTF080101MV1 Datasheet file may be downloaded here without warranties.

Datasheet ID: PTF080101MV1 638485