APT130SM70B

APT130SM70B Datasheet

APT130SM70B

Part	Datasheet
APT130SM70B	APT130SM70B (pdf)

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APT130SM70B 700V, 110A, 35mΩ Silicon Carbide N-Channel Power MOSFET Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Package APT130SM70B TO-247 FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: • Low on-resistance virtually independent on the ambient temperature • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance ESR • Stable operation at high junction temperature, Tj max = +175C • Fast and reliable body diode • Superior avalanche ruggedness SiC MOSFET Benefits: • High efficiency to enable lighter/compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need of external Free Wheeling Diode • Lower system cost of ownership Applications • PV inverter, converter and industrial motor drives • Smart grid transmission & distribution • Induction heating, and welding • H/EV powertrain and EV charger • Power supply and distribution Symbol VDSS ID IDM VGS MAXIMUM RATINGS Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor Ratings 700 110 78 262 -10 to +25 556 Unit V V W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Tj Tstg TL Torque Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Mounting Torque TO-247 Package , 6-32 or M3 screw Unit °C/W in•lbf N•m APT130SM70B STATIC CHARACTERISTICS

PDF Datasheet Preview

APT130SM70B
700V, 110A, 35mΩ

Silicon Carbide N-Channel Power MOSFET

Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

Package APT130SM70B

TO-247

FEATURES / TYPICAL APPLICATIONS

SiC MOSFET Features:
• Low on-resistance virtually independent on the ambient temperature
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance ESR
• Stable operation at high junction temperature, Tj max = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness

SiC MOSFET Benefits:
• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external Free Wheeling Diode
• Lower system cost of ownership

Applications
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Symbol VDSS

ID IDM VGS

MAXIMUM RATINGS

Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor

Ratings 700 110 78 262
-10 to +25 556

Unit V

V W/°C

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Tj Tstg TL

Torque

Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case

Mounting Torque TO-247 Package , 6-32 or M3 screw

Unit
°C/W
in•lbf

N•m

APT130SM70B

STATIC CHARACTERISTICS

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Datasheet ID: APT130SM70B 648619