APT1204R7KFLLG

APT1204R7KFLLG Datasheet

APT1204R7KFLL

Part	Datasheet
APT1204R7KFLLG	APT1204R7KFLLG (pdf)

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APT1204R7KFLL 1200V 3.5A POWER MOS 7 R FREDFET Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. TO-220 GDS • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS • Increased Power Dissipation • Easier To Drive • TO-220 Package All Ratings TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT1204R7KFLL 1200 14 ±30 ±40 135 -55 to 150 300 10 425 UNIT Volts Amps Volts Watts W/°C °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS on IDSS IGSS VGS th Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 1.75A Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V Zero Gate Voltage Drain Current VDS = 960V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1mA MIN TYP MAX UNIT 1200 Volts Ohms 250 µA 1000 ±100 nA

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APT1204R7KFLL
1200V 3.5A

POWER MOS 7 R FREDFET

Power MOS is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS by significantly lowering combines lower conduction and switching

RDS ON losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.

TO-220 GDS
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg

MAXIMUM RATINGS
• Increased Power Dissipation
• Easier To Drive
• TO-220 Package

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

APT1204R7KFLL 1200 14 ±30 ±40 135
-55 to 150 300 10 425

UNIT Volts Amps

Volts Watts W/°C
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

BVDSS RDS on

IDSS

IGSS VGS th

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 1.75A Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V Zero Gate Voltage Drain Current VDS = 960V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1mA

MIN TYP MAX UNIT
1200

Volts

Ohms
250 µA
1000
±100 nA

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Datasheet ID: APT1204R7KFLLG 648616