MW6IC1940GNBR1

MW6IC1940GNBR1 Datasheet

Document Number MW6IC1940N--1 Rev. 12/2009

Part	Datasheet
MW6IC1940GNBR1	MW6IC1940GNBR1 (pdf)

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on--chip matching that makes it usable from 1920 to 2000 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. MW6IC1940GNBR1 Final Application • Typical 2--Carrier W--CDMA Performance VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = Watts Avg., f = MHz, Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain dB Power Added Efficiency IM3 10 MHz Offset --43 dBc in MHz Bandwidth ACPR 5 MHz Offset --46 dBc in MHz Bandwidth 1920--2000 MHz, 40 W, 28 V 2 x W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Driver Applications • Typical 2--Carrier W--CDMA Performance VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band 1920--2000 MHz , Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain 27 dB IM3 10 MHz Offset --59 dBc in MHz Bandwidth ACPR 5 MHz Offset --62 dBc in MHz Bandwidth • Capable of Handling 3:1 VSWR, 28 Vdc, 1960 MHz, 40 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below --60 dBc 100 mW to 20 W CW Pout. • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching 50 Ohm Input, DC Blocked, >3 Ohm Output • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function 1 • Integrated ESD Protection • 225°C Capable Plastic Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1329A--04 TO--272 WB--16 GULL PLASTIC GND 1 VDS1 16 GND 15 NC VDS1 RFin VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation 1 RFout/VDS2 RFin VGS1 VGS2 VDS1 GND 11 RFout / VDS2 13 NC 12 GND Top View Note Exposed backside of the package is the source terminal for the transistors. Figure Functional Block Diagram Figure Pin Connections

PDF Datasheet Preview

ARCHIVE INFORMATION ARCHIVE INFORMATION

Freescale Semiconductor Technical Data

RF LDMOS Wideband Integrated

Power Amplifier

The MW6IC1940GNB wideband integrated circuit is designed with on--chip matching that makes it usable from 1920 to 2000 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

MW6IC1940GNBR1

Final Application
• Typical 2--Carrier W--CDMA Performance VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = Watts Avg., f = MHz, Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain dB Power Added Efficiency IM3 10 MHz Offset --43 dBc in MHz Bandwidth ACPR 5 MHz Offset --46 dBc in MHz Bandwidth
1920--2000 MHz, 40 W, 28 V 2 x W--CDMA

RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER

Driver Applications
• Typical 2--Carrier W--CDMA Performance VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band 1920--2000 MHz , Channel Bandwidth = MHz, PAR = dB Probability on CCDF. Power Gain 27 dB IM3 10 MHz Offset --59 dBc in MHz Bandwidth ACPR 5 MHz Offset --62 dBc in MHz Bandwidth
• Capable of Handling 3:1 VSWR, 28 Vdc, 1960 MHz, 40 Watts CW Output Power
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc 100 mW to 20 W CW Pout.
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters
• On--Chip Matching 50 Ohm Input, DC Blocked, >3 Ohm Output
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function 1
• Integrated ESD Protection
• 225°C Capable Plastic Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1329A--04 TO--272 WB--16 GULL

PLASTIC

GND 1

VDS1
16 GND 15 NC

VDS1

RFin

VGS1 VGS2 VDS1

Quiescent Current Temperature Compensation 1

RFout/VDS2

RFin

VGS1

VGS2

VDS1

GND 11

RFout /

VDS2
13 NC 12 GND

Top View

Note Exposed backside of the package is the source terminal for the transistors.

Figure Functional Block Diagram

Figure Pin Connections

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Datasheet ID: MW6IC1940GNBR1 635618