APT10SCE120B
APT10SCE120B Datasheet
APT10SCE120B 1200V 10A
| Part | Datasheet |
|---|---|
APT10SCE120B |
APT10SCE120B (pdf) |
| PDF Datasheet Preview |
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| APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC PRODUCT FEATURES • Zero Recovery Times trr • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber T O -247 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol Characteristic / Test Conditions All Ratings TC = 25°C unless otherwise specified. Ratings Unit VR VRRM VRWM IFRM IFSM Ptot TJ, TSTG TL Maximum D.C. Forward Current TC = 25°C TC = 163°C Repetitive Peak Forward Surge Current TC = 25°C, tp = 10ms, Half Sine Wave Non-Repetitive Forward Surge Current TC = 25°C, tp = 10ms, Half Sine Power Dissipation TC = 25°C TC = 110°C Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 1200 43 10 50 110 167 72 -55 to 175 300 Volts Amps W °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage IF = 10A TJ = 25°C IF = 10A, TJ = 175°C VR = 1200V TJ = 25°C VR = 1200V, TJ = 175°C Total Capactive Charge VR = 600V, IF = 10A, di/dt = -500A/µs, TJ = 25°C Junction Capacitance VR = 1V, TJ = 25°C, f = 1MHz |
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