SMBTA64E6327

SMBTA64E6327 Datasheet

SMBTA64 3

Part	Datasheet
SMBTA64E6327	SMBTA64E6327 (pdf)

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PNP Silicon Darlington Transistors • High collector current • High DC current gain SMBTA64 3 2 1 VPS05161 Type SMBTA64 Marking s2V Pin Configuration Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 °C Junction temperature Storage temperature Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value Unit -65 150 Thermal Resistance Junction - soldering point1 RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Mar-01-2005 SMBTA64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V V BR CES 30 V BR CBO 30 V BR EBO 10 ICBO ICBO IEBO hFE 10000 20000 - -V 100 nA 10 µA 100 nA Collector-emitter saturation voltage1 IC = 100 mA, IB = mA Base-emitter saturation voltage 1 IC = 100 mA, IB = mA VCEsat VBEsat AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz 125 - - MHz 1 Pulse test t 300µs, D = 2% Mar-01-2005

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PNP Silicon Darlington Transistors
• High collector current
• High DC current gain

SMBTA64 3
2 1 VPS05161

Type SMBTA64

Marking s2V

Pin Configuration

Package SOT23

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 °C Junction temperature Storage temperature

Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg

Value

Unit
-65 150

Thermal Resistance Junction - soldering point1

RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance

Mar-01-2005

SMBTA64

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V

V BR CES 30

V BR CBO 30

V BR EBO 10

ICBO

ICBO

IEBO
hFE 10000 20000 -
-V 100 nA 10 µA 100 nA

Collector-emitter saturation voltage1 IC = 100 mA, IB = mA Base-emitter saturation voltage 1 IC = 100 mA, IB = mA

VCEsat

VBEsat

AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz
125 -
- MHz
1 Pulse test t 300µs, D = 2%

Mar-01-2005

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Datasheet ID: SMBTA64E6327 638615