APT10M11JVRU2

APT10M11JVRU2 Datasheet

APT10M11JVRU2

Part	Datasheet
APT10M11JVRU2	APT10M11JVRU2 (pdf)

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APT10M11JVRU2 Boost chopper MOSFET Power Module VDSS = 100V RDSon = max Tj = 25°C ID = 142A Tc = 25°C ISOTOP Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Package SOT-227 • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 50 2500 IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C IFRMS RMS Forward Current Square wave, 50% duty These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT10M11JVRU2 All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C VGS = 0V,VDS = 80V Tj = 125°C 250 1000 VGS = 10V, ID = 71A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics

PDF Datasheet Preview

APT10M11JVRU2

Boost chopper MOSFET Power Module

VDSS = 100V RDSon = max Tj = 25°C ID = 142A Tc = 25°C

ISOTOP

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
• Package SOT-227
• Very low stray inductance
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
50 2500

IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C

IFRMS RMS Forward Current Square wave, 50% duty

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT10M11JVRU2

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

IDSS Zero Gate Voltage Drain Current

RDS on

VGS th IGSS

Drain Source on Resistance

Gate Threshold Voltage Gate Source Leakage Current

Test Conditions

Min Typ Max Unit

VGS = 0V,VDS = 100V Tj = 25°C VGS = 0V,VDS = 80V Tj = 125°C
250 1000

VGS = 10V, ID = 71A

VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V
±100 nA

Dynamic Characteristics

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Datasheet ID: APT10M11JVRU2 648609