APTM50AM19STG

APTM50AM19STG Datasheet

APTM50AM19ST

Part	Datasheet
APTM50AM19STG	APTM50AM19STG (pdf)

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APTM50AM19ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 500V RDSon = 19mW max Tj = 25°C ID = 170A Tc = 25°C Q1 G1 S1 G2 S2 VBUS NTC2 0/VBU S NTC1 VBUS 0/VBUS Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connections • Internal thermistor for temperature monitoring • High level of integration Absolute maximum ratings Parameter VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current IDM VGS RDSon PD IAR EAR EAS Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals for signal and M5 for power for easy PCB mounting Max ratings Unit Tc = 25°C Tc = 80°C ±30 Tc = 25°C 1250 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. G1 S1 NTC1 NTC2 S2 G2 APT website APTM50AM19ST All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions

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APTM50AM19ST

Phase leg Schottky Series &
parallel diodes MOSFET Power Module

VDSS = 500V RDSon = 19mW max Tj = 25°C ID = 170A Tc = 25°C

Q1 G1 S1

G2 S2

VBUS

NTC2
0/VBU S NTC1

VBUS
0/VBUS

Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design - M5 power connections
• Internal thermistor for temperature monitoring
• High level of integration

Absolute maximum ratings

Parameter

VDSS Drain - Source Breakdown Voltage

ID Continuous Drain Current

IDM VGS RDSon PD

IAR EAR EAS

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation

Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals for signal and M5 for power for
easy PCB mounting

Max ratings Unit

Tc = 25°C

Tc = 80°C
±30

Tc = 25°C
1250
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

G1 S1 NTC1 NTC2 S2 G2

APT website

APTM50AM19ST

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

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Datasheet ID: APTM50AM19STG 648896