APT10M11B2VFRG

APT10M11B2VFRG Datasheet

APT10M11B2VFR APT10M11LVFR

Part	Datasheet
APT10M11B2VFRG	APT10M11B2VFRG (pdf)

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APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W POWER MOS B2VFR FREDFET Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. • Identical Specifications T-MAX or TO-264 Package T-MAX TO-264 LVFR D • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS • Faster Switching • 100% Avalanche Tested All Ratings TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C 5 Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 5 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT10M11 100 400 ±30 ±40 520 -55 to 150 300 100 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ID on State Drain Current 2 5 VDS > ID on x RDS on Max, VGS = 10V RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.] IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS th Gate Threshold Voltage VDS = VGS, ID = 2.5mA 250 1000 ±100 CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - UNIT Volts Amps Ohms nA Volts USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone 541 382-8028 Phone 33 5 57 92 15 FAX 541 388-0364 FAX 33 5 56 47 97 61

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APT10M11B2VFR APT10M11LVFR
100V 100A 0.011W

POWER MOS

B2VFR

FREDFET

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.
• Identical Specifications T-MAX or TO-264 Package

T-MAX

TO-264

LVFR D
• Lower Leakage
• Fast Recovery Body Diode MAXIMUM RATINGS
• Faster Switching
• 100% Avalanche Tested

All Ratings TC = 25°C unless otherwise specified.

Symbol VDSS ID IDM VGS VGSM

TJ,TSTG TL IAR EAR EAS

Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C 5 Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor

Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 5 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

APT10M11 100 400 ±30 ±40 520
-55 to 150 300 100 50 2500

UNIT Volts Amps

Volts Watts W/°C
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA

ID on State Drain Current 2 5 VDS > ID on x RDS on Max, VGS = 10V

RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.]

IDSS

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

VGS th Gate Threshold Voltage VDS = VGS, ID = 2.5mA
250 1000 ±100

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website -

UNIT Volts Amps Ohms
nA Volts

USA EUROPE
405 S.W. Columbia Street Chemin de Magret

Bend, Oregon 97702 -1035 F-33700 Merignac - France

Phone 541 382-8028 Phone 33 5 57 92 15

FAX 541 388-0364 FAX 33 5 56 47 97 61

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Datasheet ID: APT10M11B2VFRG 648607