APT10M09B2VFRG

APT10M09B2VFRG Datasheet

APT10M09B2VFR APT10M09LVFR

Part	Datasheet
APT10M09B2VFRG	APT10M09B2VFRG (pdf)

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APT10M09B2VFR APT10M09LVFR 100V 100A POWER MOS FREDFET B2VFR Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. T-MAX TO-264 LVFR • T-MAX or TO-264 Package • Avalanche Energy Rated • Faster Switching • FAST RECOVERY BODY DIODE • Lower Leakage MAXIMUM RATINGS S All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT10M09B2VFR_LVFR UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current 6 TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Volts 100 Amps ±30 Volts ±40 Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 100 50 3000 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID = 50A IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

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APT10M09B2VFR APT10M09LVFR
100V 100A

POWER MOS FREDFET B2VFR

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.

T-MAX

TO-264

LVFR
• T-MAX or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
• Lower Leakage

MAXIMUM RATINGS

S All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

APT10M09B2VFR_LVFR UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current 6 TC = 25°C Pulsed Drain Current 1

Gate-Source Voltage Continuous Gate-Source Voltage Transient

Volts
100 Amps
±30 Volts
±40

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts W/°C

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 100 50 3000
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA

RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID = 50A

IDSS

Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V

Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

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Datasheet ID: APT10M09B2VFRG 648606