APT1003RKLLG

APT1003RKLLG Datasheet

APT1003RKLL

Part	Datasheet
APT1003RKLLG	APT1003RKLLG (pdf)

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APT1003RKLL 1000V 4A POWER MOS 7 R MOSFET Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-220 Package TO-220 MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise specified. APT1003RKLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 1000 4 16 ±30 ±40 Volts Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 4 10 425 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS on IDSS IGSS VGS th Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, 2A Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1mA 1000 3 100 500 ±100

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APT1003RKLL
1000V 4A

POWER MOS 7 R MOSFET

Power MOS is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS by significantly lowering combines lower conduction and switching

RDS ON losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-220 Package

TO-220

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise specified.

APT1003RKLL

UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
1000 4 16
±30 ±40

Volts Amps Volts

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts

W/°C

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 4 10 425
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS RDS on

IDSS

IGSS VGS th

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, 2A Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1mA
1000 3
100 500 ±100

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Datasheet ID: APT1003RKLLG 648602