2731GN-110M

2731GN-110M Datasheet

2731GN-110M Rev 1

Part	Datasheet
2731GN-110M	2731GN-110M (pdf)

PDF Datasheet Preview
2731GN 110M 110 Watts - 60 Volts, 200 us, 10% 2700 - 3100 MHz The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation 25°C 250 W Maximum Voltage and Current Drain-Source Voltage VDSS Gate-Source Voltage VGS 150 V -8 to +0 V Maximum Temperatures Storage Temperature TSTG -55 to +125 °C Operating Junction Temperature +200 °C CASE OUTLINE 55-QP Common Source ELECTRICAL CHARACTERISTICS 25°C Symbol Pout Gp ηd R/L VSWR-T Characteristics Output Power Gain Drain Efficiency Input Return Loss Load Mismatch Tolerance Thermal Resistance Test Conditions Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pout=110W, Freq=2.7 GHz Pulse Width=200uS, Duty=10% Min Typ 110 125 42 50 -7 • Bias Condition Vdd=+60V, Idq=250mA peak current Vgs= ~ -4.5V typical Units W dB % dB °C/W FUNCTIONAL CHARACTERISTICS 25°C ID Off IG Off BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 3mA Issue June 2011 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT OR CONTACT FACTORY 2731GN 110M 110 Watts - 60 Volts, 200 us, 10% 2700 - 3100 MHz Typical Performance Data: Frequency 2700 MHz 2900 MHz 3100 MHz Pin W Pout W Id A RL dB Nd % G dB Pout W 180 160 140 120 100 80 60 40 20 M odel 2731G N-110M Pin vs. O ut & G ain Gain dB Pin W 2.7GHz

PDF Datasheet Preview

2731GN 110M
110 Watts - 60 Volts, 200 us, 10% 2700 - 3100 MHz

The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation Device Dissipation 25°C
250 W

Maximum Voltage and Current

Drain-Source Voltage VDSS Gate-Source Voltage VGS
150 V -8 to +0 V

Maximum Temperatures

Storage Temperature TSTG -55 to +125 °C Operating Junction Temperature +200 °C

CASE OUTLINE 55-QP

Common Source

ELECTRICAL CHARACTERISTICS 25°C

Symbol Pout Gp ηd R/L VSWR-T

Characteristics Output Power Gain Drain Efficiency Input Return Loss Load Mismatch Tolerance Thermal Resistance

Test Conditions Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pin=7.5W, Freq=2.7, GHz Pout=110W, Freq=2.7 GHz Pulse Width=200uS, Duty=10%

Min Typ 110 125 42 50 -7
• Bias Condition Vdd=+60V, Idq=250mA peak current Vgs= ~ -4.5V typical

Units W dB % dB
°C/W

FUNCTIONAL CHARACTERISTICS 25°C

ID Off IG Off BVDSS

Drain leakage current Gate leakage current Drain-source breakdown voltage

VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 3mA

Issue June 2011

MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

PLEASE CHECK OUR WEB SITE AT OR CONTACT FACTORY
2731GN 110M
110 Watts - 60 Volts, 200 us, 10% 2700 - 3100 MHz

Typical Performance Data:

Frequency
2700 MHz 2900 MHz 3100 MHz

Pin W Pout W Id A RL dB Nd % G dB

Pout W
180 160 140 120 100
80 60 40 20

M odel 2731G N-110M Pin vs. O ut & G ain

Gain dB

Pin W
2.7GHz

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Datasheet ID: 2731GN-110M 648586