APTGF90A60T1G
APTGF90A60T1G Datasheet
APTGF90A60T1G
| Part | Datasheet |
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APTGF90A60T1G |
APTGF90A60T1G (pdf) |
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| APTGF90A60T1G Phase leg NPT IGBT Power Module VCES = 600V IC = 90A Tc = 80°C Q1 CR1 Pins 1/2 3/4 5/6 must be shorted together Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Max ratings Unit Tc = 25°C Tc = 80°C Tc = 25°C ±20 Tc = 25°C Tj = 150°C 200A 600V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF90A60T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage VGE = 0V VCE = 600V VGE =15V IC = 90A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 250 500 VGE th Gate Threshold Voltage VGE = VCE, IC = 1mA IGES Gate Emitter Leakage Current VGE = 20 V, VCE = 0V 5V ±150 nA Dynamic Characteristics Symbol Characteristic |
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