IRG4RC10KPBF

IRG4RC10KPBF Datasheet

IRG4RC10KPbF

Part	Datasheet
IRG4RC10KPBF	IRG4RC10KPBF (pdf)

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PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast Optimized for high operating frequencies kHz , and Short Circuit Rated to 10µs 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package • Lead-Free n-channel VCES = 600V VCE on typ. = 2.39V = 15V, IC = 5.0A • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM tsc VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG D-PAK TO-252AA Max. 600 18 10 ± 20 34 38 15 -55 to + 150 300 in. 1.6mm from case Units V µs V mJ W Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient PCB mount * Weight Typ. * When mounted on 1" square PCB FR-4 or G-10 Material . For recommended footprint and soldering techniques refer to application note #AN-994 Max. 50 Units °C/W g oz 06/10/04 IRG4RC10KPbF Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES V BR ECS VCE ON VGE th gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage - Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. 600 18 Typ. Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A

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PD 95389

IRG4RC10KPbF

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated UltraFast IGBT
• Short Circuit Rated UltraFast Optimized for high operating frequencies kHz , and Short Circuit Rated to 10µs 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency than Generation 3
• Industry standard TO-252AA package
• Lead-Free
n-channel

VCES = 600V VCE on typ. = 2.39V
= 15V, IC = 5.0A
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM tsc VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG

D-PAK TO-252AA

Max. 600 18 10 ± 20 34 38 15 -55 to + 150
300 in. 1.6mm from case

Units V
µs V mJ W

Thermal Resistance

Parameter

Junction-to-Case Junction-to-Ambient PCB mount * Weight

Typ.
* When mounted on 1" square PCB FR-4 or G-10 Material . For recommended footprint and soldering techniques refer to application note #AN-994

Max. 50

Units °C/W g oz
06/10/04

IRG4RC10KPbF

Electrical Characteristics TJ = 25°C unless otherwise specified

V BR CES V BR ECS

VCE ON

VGE th gfe ICES

IGES

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage - Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min. 600 18

Typ. Max. Units

Conditions

V VGE = 0V, IC = 250µA

V VGE = 0V, IC = 1.0A

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Datasheet ID: IRG4RC10KPBF 638344