APTGF75DH120TG

APTGF75DH120TG Datasheet


APTGF75DH120TG

Part Datasheet
APTGF75DH120TG APTGF75DH120TG APTGF75DH120TG (pdf)
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APTGF75DH120TG

Asymmetrical - Bridge NPT IGBT Power Module

VCES = 1200V IC = 75A Tc = 80°C

Q1 G1

VBUS

VBUS SENSE

E1 OUT1 OUT2
0/VBU S SENSE

NT C1
0/VBU S

G4 E4 NT C2

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C

Tj = 150°C 150A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF75DH120TG

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VGE = 0V VCE = 1200V

Tj = 25°C Tj = 125°C
250 500

VCE sat Collector Emitter saturation Voltage
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Datasheet ID: APTGF75DH120TG 648412