APTGF75DA60D1G

APTGF75DA60D1G Datasheet

APTGF75DA60D1

Part	Datasheet
APTGF75DA60D1G	APTGF75DA60D1G (pdf)

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APTGF75DA60D1 Boost Chopper NPT IGBT Power Module VCES = 600V IC = 75A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Non Punch Through NPT fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website APTGF75DA60D1 Electrical Characteristics Symbol Characteristic All ratings Tj = 25°C unless otherwise specified Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C 1 500 µA VCE on Collector Emitter on Voltage VGE = 15V IC = 75A Tj = 25°C Tj = 125°C VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

PDF Datasheet Preview

APTGF75DA60D1

Boost Chopper NPT IGBT Power Module

VCES = 600V IC = 75A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Non Punch Through NPT fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website

APTGF75DA60D1

Electrical Characteristics

Symbol Characteristic

All ratings Tj = 25°C unless otherwise specified

Test Conditions

Min Typ Max Unit

BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA

ICES Zero Gate Voltage Collector Current

VGE = 0V VCE = 600V

Tj = 25°C Tj = 125°C
1 500 µA

VCE on Collector Emitter on Voltage

VGE = 15V IC = 75A

Tj = 25°C Tj = 125°C

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

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Datasheet ID: APTGF75DA60D1G 648410