APTGF50VDA60T3G

APTGF50VDA60T3G Datasheet

APTGF50VDA60T3G

Part	Datasheet
APTGF50VDA60T3G	APTGF50VDA60T3G (pdf)

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APTGF50VDA60T3G Dual Boost Chopper NPT IGBT Power Module VCES = 600V IC = 50A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC 19 20 22 23 10 11 78 29 30 31 32 • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 28 27 26 25 29 30 23 22 20 19 18 16 15 32 234 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Max ratings Unit TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C Tj = 125°C 100A 500V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF50VDA60T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions

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APTGF50VDA60T3G

Dual Boost Chopper NPT IGBT Power Module

VCES = 600V IC = 50A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction PFC
• Interleaved PFC
19 20 22 23
10 11 78
29 30
31 32
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25 29 30
23 22
20 19 18 16 15
32 234
13 10 11 12

All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23

Absolute maximum ratings

Parameter

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

ICM VGE PD

RBSOA

Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a single boost of twice the current capability
• RoHS compliant

Max ratings

Unit

TC = 25°C

TC = 80°C

TC = 25°C
±20

TC = 25°C

Tj = 125°C 100A 500V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF50VDA60T3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

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Datasheet ID: APTGF50VDA60T3G 648406