MT9HTF6472RHY-667D1

MT9HTF6472RHY-667D1 Datasheet

MT9HTF6472RH 512MB MT9HTF12872RH 1GB

Part	Datasheet
MT9HTF6472RHY-667D1	MT9HTF6472RHY-667D1 (pdf)

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512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT9HTF6472RH 512MB MT9HTF12872RH 1GB • 200-pin, small-outline registered dual in-line memory module • Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400 • 512MB 64 Meg x 72 or 1GB 128 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent opera- tion • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Phase-lock loop PLL to reduce system clock line loading • Gold edge contacts • Single rank • I2C temperature sensor Figure 1 200-Pin SORDIMM MO-274 R/C A Module height 30mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 200-pin DIMM lead-free • Frequency/CL2 CL = 5 DDR2-800 CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 3 Marking None I -80E -800 -667 -53E Contact Micron for industrial temperature module offerings CL = CAS READ latency registered mode will add one clock cycle to CL. Not recommended for new designs. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200

PDF Datasheet Preview

512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SORDIMM Features

DDR2 SDRAM SORDIMM

MT9HTF6472RH 512MB MT9HTF12872RH 1GB
• 200-pin, small-outline registered dual in-line memory module
• Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400
• 512MB 64 Meg x 72 or 1GB 128 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Phase-lock loop PLL to reduce system clock line
loading
• Gold edge contacts
• Single rank
• I2C temperature sensor

Figure 1 200-Pin SORDIMM MO-274 R/C A

Module height 30mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 200-pin DIMM lead-free
• Frequency/CL2 CL = 5 DDR2-800 CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 3

Marking

None I
-80E -800 -667 -53E

Contact Micron for industrial temperature module offerings

CL = CAS READ latency registered mode will add one clock cycle to CL.

Not recommended for new designs.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200

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Datasheet ID: MT9HTF6472RHY-667D1 648496